| PART |
Description |
Maker |
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
